Sol-Gel Synthesis of Humidity-Sensitive P2O5-SiO2 Amorphous Films

The sol-gel synthesis of silicophosphate gels using phosphoryl chloride and tetraethoxysilane as molecular precursors is reported and discussed. Gel-derived glasses and films having the molar compositions 10P₂O₅ · 90SiO₂ and 30P₂O₅ · 70SiO₂ have been obtained. The structure of the dried gels as well as the structural modifications that occurs during the transformations in gel-derived glasses are analyzed by Fourier transform infrared spectroscopy (FTIR). It has been found that the evidence of the P—O—Si linkages begins to appear only on the FTIR spectra of the bulk gels heat treated up to 400°C while they are well resolved on the FTIR spectra of the bulk gel samples heated up to 1000°C indicating that at this temperature the transformation in the corresponding gel-derived glasses occurs. The humidity sensitive properties of the gel-films have been evaluated by electrochemical impedance spectroscopy (EIS). The phosphorous content as well as the temperature of the heat treatments strongly affect the sensitivity to RH of the gel-derived films.     

Electrochemical and Structural Characterisation of Dip-Coated Fe/Ti Oxide Films Prepared by the Sol-Gel Route

Thin solid films of mixed Fe/Ti oxide composition (Fe/Ti molar ratios: 0.5∶1, 1∶1, 1.5∶1) have been made from Fe(NO₃)₃ alcoholic solution to which Ti(OiPr)₄ was added. Films have been deposited by the dip-coating technique and heat-treated at 300°C and 500°C. Powders of Fe/Ti oxide heat-treated at 300°C are amorphous, while powders annealed at 500°C for 40 hours transformed to mixed rutile, pseudobrookite and hematite phases. The structure of the XRD amorphous films was identified with the help of near-normal reflection absorption (6°) (IRRA) and near-grazing incidence angle (NGIA) spectroscopy. NGIA FT-IR spectra of films are characterised with a single phonon mode appearing in the spectral range 600–950 cm⁻¹ which shifts with increasing Ti concentration from 675 cm⁻¹ (Fe₂O₃) to 904 cm⁻¹ (TiO₂) thus exhibiting one-mode behavior. Electrochemical investigations made with the help of cyclic voltammetry (CV) and chronocoulometry (CPC) performed in 0.01M LiOH and in 1M LiClO₄/propylene carbonate electrolytes revealed that films are able to uptake reversibly Li⁺ ions with a charge capacity (Q) per film thickness (d) in the range 0.1–0.26 mC/cm²nm and 0.06 mC/cm²nm, respectively. The temperature at which the films were prepared alters the rate of Li⁺ insertion which is faster for less compact films obtained at 300°C. In situ UV-VIS spectroelectrochemical measurements revealed that Fe/Ti oxide films bleached in the UV spectral region (300 nm<λ<450 nm) and colored in the VIS spectral region (450 nm<λ<800 nm), thus exhibiting mixed anodic and cathodic electrochromism.     

不同波长紫外光照下纳米TiO2薄膜的光致亲水性与循环伏安行为

通过溶胶-凝胶方法分别在ITO和玻璃表面制备了纳米TiO_2薄膜，研究了纳米 TiO_2薄膜在254及365nm的紫外光照射下的循环伏安行为和光致超亲水性。在紫外 光的照射下，TiO_2薄膜电极可表现出两个光电化学过程，纳米TiO_2薄膜的光致超 亲水性转变及两个光电化学过程的速率均取决于紫外光的波长，原因在于纳米 TiO_2薄膜对两种波长的光的吸收率和光子的能量不同。提出了光电化学过程的机 理，认为紫外光照射下纳米TiO_2薄膜的超亲水性变化与产生Ti~(3+)的过程引起的 表面微观结构变化存在的一定的内在联系。     

Properties and Photoelectrocatalytic Behaviour of Sol-Gel Derived TiO2 Thin Films

Titanium dioxide (TiO₂) thin films have been prepared on indium doped tin oxide (ITO) glass by sol-gel dip-coating method. Properties of the films were determined as a function of heat-treatment by X-ray diffraction, scanning electron microscopy and photoelectrochemical tests. The films heat-treated at higher temperatures show better crystallinity and photoresponse. The microscopic structure on the film after heat-treatment is attributed to the incorporation of organic polymer into the precursor solution. The performance of the electrodes treated at different temperature on photoelectrocatalytic degradation of methyl orange was investigated. The effect of applied potential and the ability of the electrode to be repeatedly used in photoelectrocatalytic degradation were also evaluated.     

Evolution of water vapor from indium-tin-oxide transparent conducting films fabricated by dip coating process

Tin-doped indium oxide In₂O₃ (indium-tin-oxide) transparent conducting films were fabricated on silicon substrates by a dip coating process. The thermal analysis of the ITO films was executed by temperature-programmed desorption (TPD) or thermal desorption spectroscopy (TDS) in high vacuum. Gas evolution from the ITO film mainly consisted of water vapor. The total amount of evolved water vapor increased on increasing the film thickness from approx. 25 to 250 nm and decreased by increasing the preparation temperature from 365 to 600°C and by annealing at the same temperature for extra 10 h. The evolution occurred via two steps; the peak temperatures for 250 nm thick films were approx. 100-120 and 205-215°C. The 25 nm thick films evolved water vapor at much higher temperatures; a shoulder at approx. 150-165°C and a peak at approx. 242°C were observed. The evolution temperatures increased by increasing the preparation and the annealing temperatures except in case of the second peak of the 25 nm thick films. The evolution of water vapor at high temperature was tentatively attributed to thermal decomposition of indium hydroxide, In(OH)₃, formed on the surface of the nm-sized ITO particles. This revised version was published online in August 2006 with corrections to the Cover Date.     

后处理对TiO_2纳米薄膜的表面结构和光催化活性的影响

半导体TiO2光催化材料对环境中各种污染物的明显去除效果已引起人们的广泛关注犤1～6犦。在普通钠钙玻璃表面涂制高光催化活性的TiO2纳米薄膜,制成环保建筑材料,不仅可以自洁玻璃表面,而且可以用于净化空气、处理废水等。但由于在热处理过程中玻璃基体内的Na+离子扩散到薄膜表面,形成光生电子和空穴的复合中心,使TiO2纳米薄膜的光催化活性大大降低犤7～10犦。为了减少玻璃中Na+离子对TiO2薄膜光催化活性的有害影响,Paz等犤8犦研究了将钠钙玻璃浸入酸溶液中,使玻璃表面的钠离子被酸中的氢离子置换出来;在玻璃表面形成SiO2凝胶层,以便阻…     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Underpotential deposition of tin(II) on a gold disc electrode and determination of tin in a tin plate sample

This work describes a study of the underpotential deposition (UPD) of Sn²⁺ on a polycrystalline gold disc electrode using cyclic voltammetry (CV) and chronocoulometry (CC). Sn²⁺ ions showed well-defined peaks from UPD and UPD stripping (UPD-S) in 1 mol/L HCl solutions, while bulk deposition (BD) and BD stripping (BD-S) of the ions were also observed. The measured UPD shifts, E_UPD, between the UPD-S and the BD-S peaks were more than 200 mV. The UPD charge and the surface coverage of tin were measured by CC. A new method for determining Sn²⁺ was therefore developed, based on the excellent electrochemical properties of the Au/Sn UPD system. A plot of the UPD-DPASV (differential pulse anodic stripping voltammetry) signal versus the Sn(II) concentration was obtained for [Sn(II)] of 1.98×10^–7 to 3.64×10^–5 M. The method developed here has been applied to determine the tin in a tin plate sample.     

Enhancement of photocurrent generation by honeycomb structures in organic thin films.

A light-emitting poly (distyryldimethylbenzene-co-triethylene glycol) rod-coil block copolymer was used to fabricate films with three-dimensionally ordered honeycomb structures by the breath-figure method. Photocurrent generation and photovoltaic performance are studied, and the dependence of photocurrent on applied electric field is investigated. Introducing the ordered porous structure significantly improves the photoelectric conversion behavior, because porous structures not only enhance the light-harvesting efficiency but also benefit charge separation and charge transfer. This phenomenon may have great prospects for enhancing the photovoltaic behavior of organic thin-film devices.